Mitsubishi Electric Corporation announced it has started shipping samples of new hybrid silicon carbide (SiC) power semiconductor modules for high-frequency switching applications. Featuring SiC diodes, the modules achieve high efficiency, downsizing and weight reduction in inverters for power conditioners and other power equipment, uninterrupted power supplies (UPS) and medical device power supplies.


These modules are the latest addition to Mitsubishi Electric’s NFH Series of next-generation hybrid SiC power semiconductor modules, which are noted for significantly reducing electric power loss in high-frequency switching applications thanks to their SiC diodes. For technical details, visit TSG TechSupport


Product Model Specifications
Hybrid SiC power modules for high-frequency switching applications CMH100DY-24NFH 1200V/100A 2in1
CMH150DY-24NFH 1200V/150A 2in1
CMH200DU-24NFH 1200V/200A 2in1
CMH300DU-24NFH 1200V/300A 2in1
CMH400DU-24NFH 1200V/400A 2in1
CMH600DU-24NFH 1200V/600A 2in1

Product Features

1) 40%reduction in power loss contributes to efficiency, downsizing and weight reduction of total system

  • Incorporates SiC Schottky Barrier Diode (SBD) and Si-IGBT for transistors in high-frequency switching applications.
  • Contributes to system efficiency because SiC-SBD does not have recovery current, so power loss is reduced about 40% through significantly lower switching loss.
  • Contributes to downsizing and weight reduction of system components, such as reactor and heat sink, thanks to high-frequency switching and significant reduction of power loss.

2) Suppresses surge voltage through internal inductance reduction

  • Low-inductance package adopted for high-frequency switching applications.
  • 100A and 150A modules reduce internal inductance by about 30%compared to conventional IGBT module using silicon.

3) Compatible with conventional power modules

  • The package is compatible with conventional power modules for easy replacement.